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首頁 > 供應(yīng)產(chǎn)品 > 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

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產(chǎn)品：	瀏覽次數(shù)：81傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)
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有效期至：	長期有效
最后更新：	2024-06-04 18:57

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傾佳電子（Changer Tech）-專業(yè)汽車連接器及功率半導(dǎo)體(IGBT單管，IGBT模塊，碳化硅SiC-MOSFET，氮化鎵GaN，驅(qū)動(dòng)IC)分銷商，聚焦新能源、交通電動(dòng)化、數(shù)字化轉(zhuǎn)型三大方向，致力于服務(wù)中國工業(yè)電源，電力電子裝備及新能源汽車產(chǎn)業(yè)鏈。相較傳統(tǒng)汽車，新能源汽車在電驅(qū)動(dòng)單元、電氣設(shè)備的數(shù)量上都有較大的增加，內(nèi)部動(dòng)力電流及信息電流錯(cuò)綜復(fù)雜，特別是高電流、高電壓的電驅(qū)動(dòng)系統(tǒng)對(duì)連接器的可靠性、體積和電氣性能提出更高的要求，這意味著新能源汽車對(duì)連接器產(chǎn)品需求量及質(zhì)量要求都將大幅提升。在新能源汽車中，高壓連接器是極其重要的元部件，整車、充電設(shè)施上均有應(yīng)用。整車上高壓連接器主要應(yīng)用場景有：DC、水暖PTC充電機(jī)、風(fēng)暖PTC、直流充電口、動(dòng)力電機(jī)、高壓線束、維修開關(guān)、逆變器、動(dòng)力電池、高壓箱、電動(dòng)空調(diào)、交流充電口等。在電動(dòng)汽車中，碳化硅功率器件的應(yīng)用主要為兩個(gè)方向，一個(gè)用于電機(jī)驅(qū)動(dòng)逆變器（電機(jī)控制器），另一個(gè)用于車載電源系統(tǒng)，主要包括：電源轉(zhuǎn)換系統(tǒng)（車載DC/DC）、車載充電系統(tǒng)（OBC）、車載空調(diào)系統(tǒng)（PTC和空壓機(jī)）等方面。碳中和、智能化引領(lǐng)人類社會(huì)進(jìn)入生態(tài)文明發(fā)展時(shí)代，科技創(chuàng)新為能源、交通、信息產(chǎn)業(yè)打造最強(qiáng)的發(fā)展動(dòng)能。科技創(chuàng)新融合數(shù)字技術(shù)和電力電子技術(shù)，為新型電力系統(tǒng)能源基礎(chǔ)設(shè)施、新型電動(dòng)出行能源基礎(chǔ)設(shè)施、新型數(shù)字產(chǎn)業(yè)能源基礎(chǔ)設(shè)施等‘三新能源基礎(chǔ)設(shè)施’，引領(lǐng)產(chǎn)業(yè)高質(zhì)量發(fā)展。”

IGBT芯片技術(shù)不斷發(fā)展，但是從一代芯片到下一代芯片獲得的改進(jìn)幅度越來越小。這表明IGBT每一代新芯片都越來越接近材料本身的物理極限。SiC MOSFET寬禁帶半導(dǎo)體提供了實(shí)現(xiàn)半導(dǎo)體總功率損耗的顯著降低的可能性。使用SiC MOSFET可以降低開關(guān)損耗，從而提高開關(guān)頻率。進(jìn)一步的，可以優(yōu)化濾波器組件，相應(yīng)的損耗會(huì)下降，從而全面減少系統(tǒng)損耗。通過采用低電感SiC MOSFET功率模塊，與同樣封裝的Si IGBT模塊相比，功率損耗可以降低約70%左右，可以將開關(guān)頻率提5倍（實(shí)現(xiàn)顯著的濾波器優(yōu)化），同時(shí)保持最高結(jié)溫低于最大規(guī)定值。

為了保持電力電子系統(tǒng)競爭優(yōu)勢，同時(shí)也為了使最終用戶獲得經(jīng)濟(jì)效益，一定程度的效率和緊湊性成為每一種電力電子應(yīng)用功率轉(zhuǎn)換應(yīng)用的優(yōu)勢所在。隨著IGBT技術(shù)到達(dá)發(fā)展瓶頸，加上SiC MOSFET絕對(duì)成本持續(xù)下降，使用SiC MOSFET替代升級(jí)IGBT已經(jīng)成為各類型電力電子應(yīng)用的主流趨勢。

安森美碳化硅MOSFET國產(chǎn)替代傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH003P120M3F2PTHG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH003P120M3F2PTNG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH004P120M3F2PTHG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH004P120M3F2PTNG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH006P120M3F2PTHG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH006P120MNF2PTG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH007F120M3F2PTHG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH008P120M3F1PTG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

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NXH010P120MNF1PG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH010P120MNF1PNG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH010P120MNF1PTNG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

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NXH010P90MNF1PG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH010P90MNF1PTG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH011F120M3F2PTHG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH011T120M3F2PTHG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH015F120M3F1PTG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

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NXH020F120MNF1PG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH020F120MNF1PTG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH020P120MNF1PTG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH020P120MNF1PG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH020U90MNF2PTG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH030F120M3F1PTG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH030P120M3F1PTG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH040F120MNF1PTG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH040F120MNF1PG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH040P120MNF1PTG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

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NXH40B120MNQ0SNG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH40B120MNQ1SNG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NXH80B120MNQ0SNG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NTBG014N120M3P 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NTBG022N120M3S 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NTBG030N120M3S 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NTBG040N120M3S 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NTBG070N120M3S 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NTCR013N120M3S 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NTH4L013N120M3S 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NTH4L014N120M3P 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NTH4L022N120M3S 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

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NTH4L040N120M3S 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NTH4L070N120M3S 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NTHL022N120M3S 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NTHL030N120M3S 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

NTHL040N120M3S 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

ST碳化硅MOSFET國產(chǎn)替代傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT011H75G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT012H90G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT012W90G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT015W120G3-4AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT018H65G3-7 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT018H65G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT018W65G3-4AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT018W65G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT020H120G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT020HU120G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT020W120G3-4AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT025H120G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT025W120G3-4 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT025W120G3-4AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT025W120G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT027H65G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT027W65G3-4AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT040H120G3-7 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT040H120G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT040H65G3-7 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT040H65G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT040H65G3SAG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT040HU65G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT040TO65G3 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT040W120G3 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT040W120G3-4 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT040W120G3-4AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT040W120G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT040W65G3-4 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT040W65G3-4AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT055H65G3-7 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT055H65G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT055HU65G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT055W65G3-4AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT060HU75G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT070H120G3-7 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT070H120G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT070HU120G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT070W120G3-4 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT070W120G3-4AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT070W120G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT1000N170 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT1000N170AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT10N120 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT10N120AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT20N120 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT20N120AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT20N120H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT20N170AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT30N120 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT30N120H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT50N120 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTH100N120G2-AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTH100N65G2-7AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTH35N65G2V-7 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTH35N65G2V-7AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTH40N120G2V-7 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTH40N120G2V7AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTH60N120G2-7 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTH70N120G2V-7 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTH90N65G2V-7 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTHC250N120G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTHS250N120G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTHS250N65G2G 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTHS250N65G3 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTL35N65G2V 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTL90N65G2V 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTW100N120G2AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTW100N65G2AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTW35N65G2V 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTW35N65G2VAG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTW40N120G2V 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTW40N120G2VAG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTW60N120G2 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTW60N120G2AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTW70N120G2V 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTW90N65G2V 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTWA20N120 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTWA30N120 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTWA35N65G2V 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTWA35N65G2V-4 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTWA40N120G2AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTWA40N120G2V 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTWA40N120G2V-4 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTWA40N12G24AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTWA50N120 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTWA60N120G2-4 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTWA60N120G2AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTWA60N12G2-4AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTWA70N120G2V 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTWA70N120G2V-4 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTWA90N65G2V 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTWA90N65G2V-4 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCT014HU65G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTHS200N120G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

SCTHS300N75G3AG 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

英飛凌碳化硅MOSFET國產(chǎn)替代傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FS33MR12W1M1H_B70 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF3MR20KM1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

F3L8MR12W2M1HP_B11 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FS03MR12A6MA1LB 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FS33MR12W1M1H_B11 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

F4-17MR12W1M1H_B76 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF4MR20KM1HP 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

F4-11MR12W2M1H_B70 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FS28MR12W1M1H_B11 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

F4-17MR12W1M1HP_B76 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

DF4-19MR20W3M1HF_B11 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

DF16MR12W1M1HF_B67 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

DF17MR12W1M1HF_B68 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FS55MR12W1M1H_B11 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF8MR12W1M1H_B11 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF55MR12W1M1H_B70 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF11MR12W2M1HP_B11 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF4MR12W2M1HP_B11 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF6MR12KM1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF2MR12W3M1H_B11 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

DF8MR12W1M1HF_B67 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FS05MR12A6MA1B 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF17MR12W1M1HP_B11 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF6MR12KM1HP 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FS13MR12W2M1HP_B11 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF6MR12W2M1HP_B11 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FS03MR12A6MA1B 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF4MR12W2M1H_B70 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF33MR12W1M1H_B11 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF1MR12KM1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF08MR12W1MA1_B11A 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF4MR20KM1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF17MR12W1M1H_B11 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF33MR12W1M1HP_B11 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF11MR12W2M1H_B70 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

F3L11MR12W2M1_B74 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF2MR12KM1HP 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF17MR12W1M1H_B70 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

F4-11MR12W2M1HP_B76 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF2MR12KM1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF55MR12W1M1H_B11 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF1MR12KM1HP 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF3MR20KM1HP 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FS13MR12W2M1H_C55 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

DF14MR12W1M1HF_B67 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

DF11MR12W1M1HF_B67 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

F3L11MR12W2M1HP_B19 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FS13MR12W2M1H_B70 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

F4-33MR12W1M1H_B76 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF6MR12W2M1H_B11 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

F4-8MR12W2M1H_B70 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF4MR12W2M1H_B11 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF8MR12W1M1H_B70 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF6MR12W2M1H_B70 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

F4-8MR12W2M1HP_B76 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF6MR12KM1P 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

FF6MR12KM1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

F4-11MR12W2M1_B76 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMWH170R650M1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMWH170R450M1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMWH170R1K0M1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZHN120R160M1T 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZH120R160M1T 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZH120R120M1T 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZHN120R120M1T 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZHN120R080M1T 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZH120R080M1T 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZHN120R060M1T 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZH120R060M1T 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZHN120R040M1T 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZHN120R030M1T 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZH120R020M1T 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZHN120R020M1T 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZH120R010M1T 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZHN120R010M1T 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA75R140M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZA75R140M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMBG75R090M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMDQ75R090M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZA75R090M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMDQ75R090M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA75R090M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMDQ75R060M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA75R060M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZA75R060M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMDQ75R060M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMBG75R060M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZA75R040M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA75R040M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMDQ75R027M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMBG75R027M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA75R027M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZA75R027M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMDQ75R027M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA75R020M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMBG75R020M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMDQ75R020M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZA75R020M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA75R016M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZA75R016M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG65R050M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW65R050M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA65R050M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA65R040M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG65R040M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW65R040M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW65R020M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA65R020M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG65R020M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG65R015M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA65R015M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW65R015M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG65R007M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG40R011M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG40R045M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMT40R011M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG40R036M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMT40R025M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMT40R015M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMT40R036M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMT40R045M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG40R025M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG40R015M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMYH200R100M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMYH200R075M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMYH200R050M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMYH200R024M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMYH200R012M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBF170R1K0M1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBF170R650M1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBF170R450M1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG120R350M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW120R350M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZ120R350M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG120R234M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG120R220M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW120R220M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZ120R220M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG120R181M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMBG120R160M1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZ120R140M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG120R140M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW120R140M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMBG120R120M1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG120R116M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG120R090M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW120R090M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZ120R090M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMBG120R080M1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMW120R080M1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG120R078M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW120R060M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG120R060M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMBG120R060M1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMW120R060M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZ120R060M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG120R053M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMW120R045M1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG120R045M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZ120R045M1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW120R045M1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMBG120R040M1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW120R040M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZH120R040M1T 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA120R040M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG120R040M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMW120R035M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMBG120R030M1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW120R030M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMZH120R030M1T 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA120R030M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG120R030M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZ120R030M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG120R026M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG120R022M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA120R020M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW120R020M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMBG120R020M1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG120R017M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA120R014M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW120R014M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG120R012M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMBG120R010M1 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG120R008M2H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA120R007M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW120R007M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMBG75R140M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMDQ75R140M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMDQ75R140M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMBG75R040M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMDQ75R040M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMDQ75R040M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMDQ75R016M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMBG75R016M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMDQ75R016M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMDQ75R008M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

AIMDQ75R008M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG65R260M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMT65R260M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG65R163M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMT65R163M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW65R107M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG65R107M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMT65R107M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA65R107M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW65R083M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMT65R083M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG65R083M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA65R083M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW65R072M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG65R072M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA65R072M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMT65R072M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMT65R057M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA65R057M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG65R057M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW65R057M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG65R048M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA65R048M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMT65R048M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW65R048M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG65R039M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW65R039M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA65R039M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMT65R039M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMT65R030M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA65R030M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW65R030M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG65R030M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMW65R027M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMZA65R027M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMBG65R022M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

IMT65R022M1H 傾佳電子致力于SiC MOSFET國產(chǎn)化推進(jìn)

對(duì)于通用應(yīng)用，SiC 功率器件可以替代 Si IGBT，從而將開關(guān)損耗降低高達(dá) 70% 至 80%，具體取決于轉(zhuǎn)換器和電壓和電流水平。IGBT 相關(guān)的較高損耗可能成為一個(gè)重要的考慮因素。熱管理會(huì)增加使用 IGBT 的成本，而其較慢的開關(guān)速度會(huì)增加電容器和電感器等無源元件的成本。從整體系統(tǒng)成本來看SiC MOSFET加速替代IGBT已經(jīng)成為各類新的電力電子設(shè)計(jì)中的主流趨勢。SiC MOSFET 更耐熱失控。碳化硅導(dǎo)熱性更強(qiáng)，可實(shí)現(xiàn)更好的設(shè)備級(jí)散熱和穩(wěn)定的工作溫度。

Si IGBT 的一個(gè)顯著缺點(diǎn)是它們極易受到熱失控的影響。當(dāng)器件溫度不受控制地升高時(shí)，就會(huì)發(fā)生熱失控，導(dǎo)致器件發(fā)生故障并最終失效。在高電流、高電壓和高工作條件很常見的電機(jī)驅(qū)動(dòng)應(yīng)用中，例如電動(dòng)汽車或制造業(yè)，熱失控可能是一個(gè)重大的設(shè)計(jì)風(fēng)險(xiǎn)。SiC MOSFET 更適合溫度較高的環(huán)境條件空間，例如汽車和工業(yè)應(yīng)用。此外，鑒于其導(dǎo)熱性，SiC MOSFET 可以消除對(duì)額外冷卻系統(tǒng)的需求，從而有可能減小整體系統(tǒng)尺寸并降低系統(tǒng)成本。由于 SiC MOSFET 的工作開關(guān)頻率比 Si IGBT 高得多，因此它們非常適合需要精確電機(jī)控制的應(yīng)用。高開關(guān)頻率在自動(dòng)化制造中至關(guān)重要，其中高精度伺服電機(jī)用于工具臂控制、精密焊接和精確物體放置。

SiC 功率器件的卓越材料特性使這些器件能夠以更快的開關(guān)速度、更低的開關(guān)損耗和更薄的有源區(qū)運(yùn)行，從而實(shí)現(xiàn)效率更高、開關(guān)頻率更高、更節(jié)省空間的設(shè)計(jì)。因此，SiC MOSFET 正成為電源轉(zhuǎn)換應(yīng)用中優(yōu)于傳統(tǒng)硅（IGBT,MOSFET）的首選。

Changer Tech 傾佳電子有限公司

Sunsanna Yang 楊茜

手機(jī)：13266663313（微信同號(hào)）

郵箱：sunsanna@changer-tech.com??

國產(chǎn)SiC碳化硅MOSFET功率器件可靠性及一致性如何確保？

電力電子系統(tǒng)研發(fā)制造商一般需要碳化硅MOSFET功率器件供應(yīng)商提供可靠性測試報(bào)告的原始數(shù)據(jù)和器件封裝的FT數(shù)據(jù)。

SiC碳化硅MOSFET可靠性報(bào)告原始數(shù)據(jù)主要來自以下可靠性測試環(huán)節(jié)的測試前后的數(shù)據(jù)對(duì)比，通過對(duì)齊可靠性報(bào)告原始數(shù)據(jù)測試前后漂移量的對(duì)比，從而反映器件的可靠性控制標(biāo)準(zhǔn)及真實(shí)的可靠性裕量。

FT數(shù)據(jù)來自碳化硅MOSFET功率器件FT測試(Final Test，也稱為FT)是對(duì)已制造完成的碳化硅MOSFET功率器件進(jìn)行結(jié)構(gòu)及電氣功能確認(rèn)，以保證碳化硅MOSFET功率器件符合系統(tǒng)的需求。

通過分析碳化硅MOSFET功率器件FT數(shù)據(jù)的關(guān)鍵數(shù)據(jù)（比如V(BR)DSS，VGS(th)，RDS(on)，

IDSS）的正態(tài)分布，可以定性碳化硅MOSFET功率器件材料及制程的穩(wěn)定性，這些數(shù)據(jù)的定性對(duì)電力電子系統(tǒng)設(shè)計(jì)及大批量制造的穩(wěn)定性也非常關(guān)鍵。

基本™（BASiC Semiconductor）第二代SiC碳化硅MOSFET兩大主要特色：

1.出類拔萃的可靠性：相對(duì)競品較為充足的設(shè)計(jì)余量來確保大規(guī)模制造時(shí)的器件可靠性。

基本™（BASiC Semiconductor）第二代SiC碳化硅MOSFET 1200V系列擊穿電壓BV值實(shí)測在1700V左右，高于市面主流競品，擊穿電壓BV設(shè)計(jì)余量可以抵御碳化硅襯底外延材料及晶圓流片制程的擺動(dòng)，能夠確保大批量制造時(shí)的器件可靠性，這是基本™（BASiC Semiconductor）第二代SiC碳化硅MOSFET最關(guān)鍵的品質(zhì). 基本™（BASiC Semiconductor）第二代SiC碳化硅MOSFET雪崩耐量裕量相對(duì)較高，也增強(qiáng)了在電力電子系統(tǒng)應(yīng)用中的可靠性。

2.可圈可點(diǎn)的器件性能：同規(guī)格較小的Crss帶來出色的開關(guān)性能。

基本™（BASiC Semiconductor）第二代SiC碳化硅MOSFET反向傳輸電容Crss 在市面主流競品中是比較小的，帶來關(guān)斷損耗Eoff也是非常出色的，優(yōu)于部分海外競品，特別適用于LLC應(yīng)用.

Basic™ (BASiC Semiconductor) second generation SiC silicon carbide MOSFET has two main features:

1. Outstanding reliability: Compared with competing products, there is sufficient design margin to ensure device reliability during mass manufacturing.

The breakdown voltage BV value of BASiC Semiconductor's second-generation SiC silicon carbide MOSFET 1200V series is measured to be around 1700V, which is higher than mainstream competing products on the market. The breakdown voltage BV design margin can withstand silicon carbide substrate epitaxial materials and wafers. The swing of the tape-out process can ensure device reliability during mass manufacturing, which is the most critical quality of BASiC Semiconductor’s second-generation SiC silicon carbide MOSFET. BASiC Semiconductor’s second-generation SiC silicon carbide MOSFET The relatively high avalanche tolerance margin also enhances reliability in power electronic system applications.

2. Remarkable device performance: Smaller Crss with the same specifications brings excellent switching performance.

BASiC Semiconductor's second-generation SiC silicon carbide MOSFET reverse transmission capacitor Crss is relatively small among mainstream competing products on the market, and its turn-off loss Eoff is also very good among mainstream products on the market, better than some overseas competing products. , especially suitable for LLC applications, typical applications such as charging pile power module downstream DC-DC applications.

Ciss：輸入電容（Ciss＝Cgd＋Cgs） ⇒柵極-漏極和柵極-源極電容之和：它影響延遲時(shí)間；Ciss越大，延遲時(shí)間越長?；?trade;（BASiC Semiconductor）第二代SiC碳化硅MOSFET 優(yōu)于主流競品。

Crss：反向傳輸電容（Crss＝Cgd） ⇒柵極-漏極電容：Crss越小，漏極電流上升特性越好，這有利于MOSFET的損耗，在開關(guān)過程中對(duì)切換時(shí)間起決定作用，高速驅(qū)動(dòng)需要低Crss。

Coss：輸出電容（Coss＝Cgd＋Cds）⇒柵極-漏極和漏極-源極電容之和：它影響關(guān)斷特性和輕載時(shí)的損耗。如果Coss較大，關(guān)斷dv／dt減小，這有利于噪聲。但輕載時(shí)的損耗增加。

傾佳電子（Changer Tech）致力于國產(chǎn)碳化硅（SiC）MOSFET功率器件在電力電子市場的推廣！Changer Tech-Authorized Distributor of BASiC Semiconductor which committed to the promotion of BASiC™ silicon carbide (SiC) MOSFET power devices in the power electronics market!

傾佳電子（Changer Tech）專業(yè)分銷的基本™第二代碳化硅SiC MOSFET主要有B2M160120H，B2M160120Z，B2M160120R，B2M080120H,B2M080120Z，B2M080120R，B2M018120H，B2M018120Z，B2M020120Y，B2M065120H，B2M065120Z，B2M065120R，B2M040120H，B2M040120Z，B2M040120R，B2M032120Y，B2M030120Z，B2M030120H，BM030120R，B2M650170H， B2M650170R，B2M009120Y。適用大功率電力電子裝置的SiC MOSFET模塊，半橋SiC MOSFET模塊，ANPC三電平碳化硅MOSFET模塊，T型三電平模塊，MPPT BOOST SiC MOSFET模塊。

B2M032120Y國產(chǎn)替代英飛凌IMZA120R030M1H，安森美NTH4L030N120M3S以及C3M0032120K。

B2M040120Z國產(chǎn)替代英飛凌IMZA120R040M1H，安森美NTH4L040N120M3S，NTH4L040N120SC1以及C3M0040120K，意法SCT040W120G3-4AG。

B2M020120Y國產(chǎn)替代英飛凌IMZA120R020M1H，安森美NTH4L020N120SC1，NTH4L022N120M3S以及C3M0021120K，意法SCT015W120G3-4AG。

B2M065120H國產(chǎn)代替安森美NTHL070N120M3S。

B2M065120Z國產(chǎn)代替英飛凌IMZ120R060M1H，安森美NVH4L070N120M3S，C3M0075120K-A，意法SCT070W120G3-4AG。

B2M160120Z國產(chǎn)代替英飛凌AIMZHN120R160M1T，AIMZH120R160M1T

B2M080120Z國產(chǎn)代替英飛凌AIMZHN120R080M1T，AIMZH120R080M1T

B2M080120R國產(chǎn)代替英飛凌IMBG120R078M2H

B2M040120Z國產(chǎn)替代英飛凌AIMZHN120R040M1T，AIMZH120R040M1T

B2M040120R國產(chǎn)替代英飛凌IMBG120R040M2H

B2M018120R國產(chǎn)替代英飛凌IMBG120R022M2H

B2M018120Z國產(chǎn)替代英飛凌AIMZH120R020M1T，AIMZH120R020M1T

B2M065120Z國產(chǎn)替代英飛凌AIMZHN120R060M1T，AIMZH120R060M1T

基本™B2M第二代碳化硅MOSFET器件主要特色：

• 比導(dǎo)通電阻降低40%左右

• Qg降低了60%左右

• 開關(guān)損耗降低了約30%

• 降低Coss參數(shù)，更適合軟開關(guān)

• 降低Crss，及提高Ciss/Crss比值,降低器件在串?dāng)_行為下誤導(dǎo)通風(fēng)險(xiǎn)

• 最大工作結(jié)溫175℃• HTRB、 HTGB+、 HTGB-可靠性按結(jié)溫Tj=175℃通過測試

• 優(yōu)化柵氧工藝，提高可靠性

• 高可靠性鈍化工藝

• 優(yōu)化終端環(huán)設(shè)計(jì)，降低高溫漏電流

• AEC-Q101

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